Training NETwork on Functional Interfaces for SiC (NETFISIC)
Training NETwork on Functional Interfaces for SiC
Start date: Feb 1, 2011,
End date: Jan 31, 2015
"The main scientific objective of NetFISiC is to provide Silicon carbide material (of various polytypes) with improved and adequate functional interfaces for getting a step forward in electronic devices performance. Research efforts will be dedicated to solve the problems faces by important devices like MOSFET and Schottky diodes. Besides, some fundamental research will be performed both on the growth aspect and on new and innovating devices. Applications in high temperature, high power and harsh environment are targeted.Based on this research program, the ambitious target of NETFISiC is to train the next generation of researchers on various semiconductor related fields (such as physics, material science and engineering), taking the emerging SiC technology as an appropriate tool for study. This shall contribute to long-term strengthening of the European position on a technologically important semiconductor.13 ESRs and 2 ERs will be recruited and trained within this network, on multi-disciplinary subjects like material growth, characterization and devices fabrication, with a particular focus on SiC.NetFISiC consortium is mainly composed (11 out of 12) of the members of the presently running Marie Curie RTN ""MANSiC"" (MRTN-CT-2006-035735). The 12 partners of NetFISiC include 3 companies (SiCED, ACREO and NOVASiC). One associated partner (LIP company) will complement the consortium by providing key training offer and administrative/management assistance. Obviously NetFISiC network will be efficient from its beginning, with members having a very good experience of network implementation and functioning. On the other hand, NetFISiC will not be just a continuation of MANSiC network, which was targeting only 3C-SiC polytype, but significantly go one step beyond by focusing on surface and interfaces of different polytypes in order to find solution to specific technological issues related to SiC technology."
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