Single active dopant detection in semiconductor na.. (Holoview)
Single active dopant detection in semiconductor nanowires using electron holography
Start date: Dec 1, 2012,
End date: Nov 30, 2017
"The end of ""happy scaling"" in the semiconductor industry has lead to innovation being a key parameter in nanoelectronics. Doped nanowires of all types of sizes, shapes and composition are now used as components to build nano-electronic devices, light sources, detectors and for photovoltaic applications. As these devices are reduced in size, the location of individual dopant atoms becomes more important and the behavior of only one or two atoms can dominate their properties. More recently, research into devices that contain a single dopant atom has begun to gain momentum. At this time there is no method that can routinely measure the presence of the single dopant atoms that are inside these devices and our experience in the nanotechnology age has taught us that we cannot make what we cannot see. In 2011, several review papers in high-impact journals have highlighted the need for a technique that can see these atoms. Their detection is now within reach, using a technique known as off-axis electron holography."
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