Materials for Robust Gallium Nitride
Start date: Nov 1, 2008,
End date: Oct 31, 2011
The MORGaN project addresses the need for a new materials for electronic devices and sensors that operate in extreme conditions, especially high temperature, high electric field and highly corrosive environment. It will take advantage of the excellent physical properties of diamond and gallium nitride heterostructures. The association of the two materials will give rise to the best materials and devices for ultimate performance in extreme environments. Both materials possess durability and robustness to high temperature, radiation and electric field. Diamond material exhibits the best mechanical robustness and thermal conductivity, while GaN presents also high electron mobility, giving high power handling and efficiency. III-N systems have other desirable properties for sensor applications in extreme environments. It is the only highly polar semiconductor matrix that has ceramic-like stability and can form heterostructures. It has the highest spontaneous polarisation with a Curie temperature above 1000°C for AlN: a lattice matched III-N heterostructure with a built-in polarisation discontinuity is expected to enable transistor action above 1000°C. The packaging and metallisation of an electronic device or sensor are important elements in extreme conditions. Metal contacts must be stable and the package must be thermally compatible with the device requirements and chemically stable. MORGaN proposes a novel technological solution to electron device and sensor modules. Advanced 3D ceramic packaging and new metallisation techniques based on the emerging technology of MN+1AXN alloys will also be explored. As such, the vision of MORGaN for materials for extreme conditions is holistic, involving 2 large industrial partners, 2 industrial labs, 6 SMEs and 13 public research partners. The project includes research, demonstration, management, training and dissemination activities.
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