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Graphene-based Devices and Circuits for RF Applications (GRADE)
Start date: Oct 1, 2012, End date: Mar 31, 2016 PROJECT  FINISHED 

Description Demonstration of the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies GRADE is a project focusing on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. These are Graphene field effect transistors (GFET), that use graphene as a high-mobility transistor channel and the alternative "graphene base transistors" (GBT), that are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfil this requirement. This project enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing. The GRADE consortium consists of four academic partners, of which two have a strong experimental background and excellent processing facilities and one is focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design; one research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing; and one global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.\\n 

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