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Emerging electronic states and devices based on Mott insulator interfaces (MINT)
Start date: Oct 1, 2014, End date: Sep 30, 2019 PROJECT  FINISHED 

"Transition metal oxides possess a broad range of functionalities (superconductivity, magnetism, ferroelectricity, multiferroicity) stemming from the interplay between structural effects and electronic correlations. Recent work has revealed exciting physics at their interfaces, including two-dimensional (2D) conductivity and superconductivity in the electron gas that forms at the interface between two band insulators, LaAlO3 and SrTiO3. However, to date, no interfacial system has truly shown electronic properties that are absent from the phase diagram of both bulk constituents. I argue that to fully embrace the immense potential of oxide interfaces and unveil unprecedented electronic phases, combining insulators with stronger electronic correlations is mandatory.At the crossroad between strongly-correlated electron physics, microelectronics and spintronics, the MINT project will pioneer routes toward a new realm of solid-state physics. MINT will harness electronic and magnetic instabilities in correlated oxides to craft new electronic phases controllable by external stimuli. These phases will be generated by the synergic action of strain engineering, interfacial charge/orbital/spin reconstruction and octahedra connectivity control, using rare-earth titanate RTiO3 Mott-Hubbard insulators as templates.Emerging states that are foreseen include 2D electron gases with ferroic order, superconductivity at relatively high temperature, topological states and new forms of multiferroicity and magnetoelectric coupling. The discovery of any of these new states would represent a major breakthrough in oxide electronics. They will open possibilities for innovative devices yielding giant electroresistance without ferroelectrics, and new schemes to control spin currents by electric fields.At full term, MINT will establish whether oxide interfaces will live up to their expectations and start in the coming decades a technological revolution comparable to that of silicon."
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