Deep mm-Wave RF-CMOS Integrated Circuits
Start date: Jan 1, 2009,
End date: Dec 31, 2013
Wireless and mobile communication systems have become an important part of our daily environment. Since the introduction of the GSM-network in the early nineties, different wireless applications such as WiFi, Bluetooth, GPS, etc. have been brought into the market. This has become possible due to the high integration of integrated circuits in relatively cheap technologies. Besides the digital signal processing, those wireless applications require complex analog circuits operating at very high frequencies (RF circuits). In the early days these were implemented as discrete components or standalone ICs in expensive technologies such as GaAs, InP and SiGe. Due to the research towards nanometer CMOS technologies, and due to improved RF circuit techniques, RF-CMOS has been introduced since the mid nineties. The intention of this research project is to take the next big leap forward in wireless applications, i.e. the exploration and research, based on the vast RF-CMOS knowledge already existing, towards the Extremely High Frequencies which is above 70 GHz up to 300GHz, with wavelengths close to 1 mm. The research project is a logical evolution of the RF-CMOS research knowledges of the team. For that the "natural evolution" acronym DARWIN (Deep mm-Wave RF CMOS Integrated Circuits (with the M of CMOS inverted (W)) is choosen. Implementing circuit techniques in standard CMOS technologies at those frequencies is again an enormous challenge and will open a lot of new opportunities and applications towards the future due to possibilities in safety monitoring, e.g. collision radar detection for automobiles at 77 GHz, the need for high data-rate telecommunication systems, with capacity of 1-10 Gbps, and imaging for medical and security systems. The goal of the proposed project is to perform the necessary fundamental basic research to be able to implement these 70-300 GHz applications in CMOS technology (45 nm and below).
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