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AlGaN and InAlN based microwave components (AL-IN-WON)

Start date: Nov 1, 2010, End date: Apr 30, 2014,

"This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected.AL-IN-WON will explore two main disrupting routes:- Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability.- High effi ...
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