In 1990 Eaglesham and Cerullo [Phys. Rev. Lett. 64, 1943 (1990)] reported for the first time that three dimensional SiGe islands can be grown crystalline on Si, creating thus high expectations that these nanostructures could provide a valid route towards innovative, scalable and CMOS-compatible nanodevices. Two decades later the researcher has investigated for the first time their electronic prope ...